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The Significance of Social Factors for the Adequate Description of GrammarsWOODS, N. J.Multilingua. 1991, Vol 10, Num 3, pp 325-330, issn 0167-8507Article

Optical second harmonic generation studies of epitaxial growth of Si and SiGeTOK, E. S; WOODS, N. J; PRICE, R. W et al.Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 297-301, issn 0022-0248Conference Paper

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependenceTOK, E. S; WOODS, N. J; ZHANG, J et al.Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 321-326, issn 0022-0248Conference Paper

Self-aligned cobalt disilicide/silicon Schottky barrier contacts : fabrication, materials and electrical characterizationWOODS, N. J; HALL, S.Semiconductor science and technology. 1996, Vol 11, Num 7, pp 1103-1115, issn 0268-1242Article

On the contribution of recombination currents in Schottky barrier diodesWOODS, N. J; HALL, S.Semiconductor science and technology. 1994, Vol 9, Num 12, pp 2295-2297, issn 0268-1242Article

The effects of carbon incorporation during GSMBE of Si1-yCy and Si1-x-yGexCy: growth dynamics and segregationPRICE, R. W; TOK, E. S; WOODS, N. J et al.Surface science. 2003, Vol 532-35, pp 905-910, issn 0039-6028, 6 p.Conference Paper

Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si1-xGex structuresSHIN, D.-H; BECKER, C. E; HARRIS, J. J et al.Semiconductor science and technology. 1998, Vol 13, Num 10, pp 1106-1110, issn 0268-1242Article

Modified GSMBE for higher growth rate and non-selective growthWOODS, N. J; BRETON, G; GRAOUI, H et al.Journal of crystal growth. 2001, Vol 227-28, pp 735-739, issn 0022-0248Conference Paper

Variable-range hopping transport in modulation-doped n-channel Si/Si1-xGex quantum well structuresSHIN, D.-H; BECKER, C. E; HARRIS, J. J et al.Semiconductor science and technology. 1999, Vol 14, Num 9, pp 762-767, issn 0268-1242Article

Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface 'PRICE, R. W; TOK, E. S; LIU, R et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 676-680, issn 0022-0248, 5 p.Conference Paper

Investigation of delta-doped quantum wells for power FET applicationsROBERTS, J. M; HARRIS, J. J; WOODS, N. J et al.Superlattices and microstructures. 1998, Vol 23, Num 2, pp 187-190, issn 0749-6036Article

Electrical properties of lateral p-n junctions formed on patterned (110) GaAs substratesGARDNER, N. R; WOODS, N. J; DOMINGUEZ, P. S et al.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 737-741, issn 0268-1242Article

Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performanceOLSEN, S. H; O'NEILL, A. G; NORRIS, D. J et al.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 655-661, issn 0268-1242Article

Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZHANG, J; WOODS, N. J; BRETON, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 399-405, issn 0921-5107Conference Paper

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